產(chǎn)品特點(Product Features):
? Fast 35 ns Read/Write Cycle
? SRAM Compatible Timing Uses Existing SRAM Controllers Without Redesign
? Unlimited Read & Write Endurance
? Data Always Non-volatile for >20-years at Temperature
? One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System for Simpler, More Efficient Design
? Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, reliability, and liability issues
? 3.3 Volt Power Supply
? Automatic Data Protection on Power Loss
? Commercial, Industrial, and Automotive Temperatures
? RoHS-Compliant SRAM-compatible TSOPII Package
? RoHS-Compliant SRAM-compatible BGA Package Shrinks Board Area By Three Times
產(chǎn)品系列(Product Family):
Part Number
(型號)
|
Description
(描述)
|
OperatingTemperature
(操作溫度)
|
MR2560A08BYS35 |
3.3 V 32Kx8 MRAM 44-TSOP |
Commercial |
MR2560A08BYS35R |
3.3 V 32Kx8 MRAM 44-TSOP T&R |
Commercial |
MR2560A08BMA35 |
3.3 V 32Kx8 MRAM 48-BGA |
Commercial |
MR2560A08BCYS35 |
3.3 V 32Kx8 MRAM 44-TSOP |
Industrial |
MR2560A08BCYS35R |
3.3 V 32Kx8 MRAM 44-TSOP T&R |
Industrial |
MR2560A08BCMA35 |
3.3 V 32Kx8 MRAM 48-BGA |
Industrial |
MR2560A08BMYS35 |
3.3 V 32Kx8 MRAM 44-TSOP |
Automotive |
MR2560A08BMYS35R |
3.3 V 32Kx8 MRAM 44-TSOP T&R |
Automotive |
MR2560A08BMMA35 |
3.3 V 32Kx8 MRAM 48-BGA |
Automotive |
產(chǎn)品pin腳定義(Pin Diagrams ):
美國Everspin半導(dǎo)體中國區(qū)指定代理 MRAM(非易失性存儲器)
我司是美國Everspin半導(dǎo)體中國區(qū)指定代理.
Everspin MRAM是一種具有革命性的存儲器,其原理是利用電子自旋的磁性結(jié)構(gòu),
來提供不會產(chǎn)生損耗的非揮發(fā)特性。Everspin MRAM可在集成了硅電路的磁性材
料中存儲信息,以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發(fā)特性。
主要代理MRAM(非易失性存儲器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量
我司產(chǎn)品可完全替代FRAM(鐵電存儲器),NV-SRAM,MRAM,如有需要請隨時和我們聯(lián)系.
如以下型號:
CY14V101LA
CY14C101I CY14B256Q CY14B104K
FM23MLD16 FM25H20 FM1808 FM18W08
FM28V020 FM25L512 FM24W256 FM24V01
FM24V02